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QZ 2SD2012 original NPN Silicon Power Transistor TO-220 D2012 2SD2012

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Shenzhen QZ Industrial Co., Ltd.Multispecialty supplier6 yrsCN

Key attributes

Industry-specific attributes

Model Number
2SD2012

Type
Transistors

Brand Name
Original Brand

Package Type
Throught Hole

Other attributes

Mounting Type
-

Description
-

Place of Origin
Original

Package / Case
TO-220-3 Full Pack

Brand
TRANS NPN 60V 3A TO-220F

Current - Collector (Ic) (Max)
3A

Voltage - Collector Emitter Breakdown (Max)
60V

Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A

Current - Collector Cutoff (Max)
100μA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 5V

Power - Max
25W

Frequency - Transition
3MHz

Operating Temperature
150°C (TJ)

Mounting Type
Through Hole

FET Type
N-Channel

Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V

Description
NPN Silicon Power Transistor

Condition
New and original

Collector emitter voltage
60V

Collector Current
3A

Operating Temperature
150℃(Tj)

Storage Temperature Range
-55℃-+150℃

Lead time

Quantity (pieces)1 - 500501 - 3000 > 3000
Lead time (days)45To be negotiated

Customization

Customized packaging
Min. order: 100000

Know your supplier

Multispecialty supplier6 yrsLocated in CN
Registered trademarks (1)
Services
Quality control

Product descriptions from the supplier

10 - 100 pieces
$9.99
>= 101 pieces
$8.87

Quantity

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Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00

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